This paper is a report of the designing and making of a UWB pulse generator using SRD ( step recovery diode) and microwave transmission line and by means of intervention and elimination. 文中利用SRD(阶跃恢复二极管)与微波传输线,通过错位对消的方法设计与制作了UWB脉冲发生器。
Electrical characteristics of SRD ( step recovery diode) are analyzed, and a model of SRD is proposed. 分析了阶跃恢复二极管(SRD)的电特性,提出了一种SRD模型。
A new ultra-wideband ( UWB) Gaussian pulse generator composed of a step recovery diode ( SRD), a field-effect transistor ( FET) and a Schottky diode was developed. 设计了一种超宽带高斯脉冲的脉冲发生器,此脉冲发生器主要由阶跃恢复二极管,FET管和肖特基二极管组成。
Design of planar structure comb-like spectrum generator based on step recovery diode 基于阶跃二极管的平面结构梳状谱发生器设计
The working principle, the analysis of the parameters and the developing status of fast soft recovery diode are introduced in this paper. 详细介绍了快速软恢复二极管的工作原理、参数分析和现状,并且指出了快速软恢复二极管的发展方向及主要的技术难点。
A new ultra wideband ( UWB), low-complexity and step recovery diode Gaussian pulse generator is introduced. 提出了一种新型的用于超宽带系统的高斯脉冲发生器。
Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode. 采用直拉单晶硅片代替成本较高的外延硅片,采取铂扩散的方法引入复合中心,从而控制少子寿命以减少快恢复二极管的反向恢复时间。
Image intensifier with transmitted secondary electron multiplication Step recovery diode frequency multiplier 阶跃恢复二极管倍频器二次发射电子倍增管
Based on step recovery diode, a pulse fast edge shaping circuit is realized. 阐述了一种基于阶跃恢复二极管的脉冲快速沿整形电路设计。
K& Band Frequency Multiplier Using Step Recovery Diode K波段阶跃恢复二极管高次倍频器
Power fast recovery diode, which is abbreviated to FRD, is one of the key devices in modern power electronic technology. In the power electronic circuits, FRD is usually parallel connected with three-end power devices as their freewheeling diode. 高压功率快恢复二极管(以下简称FRD)广泛地应用于电力电子电路中,作为续流二极管与三端功率器件并联使用,是现代电力电子技术中的关键器件。
Design of 16-order Multiplier with Step Recovery Diode 用阶跃恢复二极管设计16次倍频器
Development of High Speed Soft Recovery Diode With Cathode Shorted Points 具有阴极短路点结构的快速软恢复整流管的研制
Experiment on Localized Platinum Doping Lifetime Control in Fast Recovery Diode 局域铂掺杂寿命控制快恢复二极管的研究
Numerical Analysis of Local Lifetime Control for Fast Soft Recovery Diode 快速软恢复二极管局域寿命控制数值分析
A high-order microwave frequency multiplier is designed by adopting the step recovery diode for a passive rubidium atomic frequency standard. 设计了一种采用阶跃恢复二极管来实现的、用于被动型铷原子频标的微波高次倍频器。
The thesis analyses the principles and characteristics of the pulse generator composing from avalanche transistor and step recovery diode ( SRD), the analysis provide the necessary theoretic bases for design and realization nanosecond and sub-nanosecond pulse circuit. 论文分析了由雪崩晶体管组成的窄脉冲发生电路和阶跃二极管组成的脉冲整形电路的原理与特性。为纳秒和亚纳秒级脉冲电路的设计与实现提供了必要的理论依据。
In the way of MOS taking place of the Fast recovery diode and the Schottky barrier diode, it can cut down on-resistance and reduce the rectification loss. 同步整流技术采用低导通电阻的MOS管代替导通压降相对较大的快恢复二极管或肖特基二极管,大大减小了输出整流损耗,效率相对提高。
Application of proton irradiation technology to soft recovery diode 质子辐照技术在软恢复二极管中的应用
This paper introduces a fast and soft recovery diode with double base regions by diffusion. 本文介绍了一种采用扩散型双基区结构的快速软恢复二极管。
The step voltage generation process and mechanism in the step recovery diode ( SRD) were analyzed and a new SRD model was proposed based on the parallel connection of a nonlinear capacitance and a PN diode. 详细分析了阶跃恢复二极管(SRD)阶跃电压的产生过程和机理,提出了一种新的基于一个非线性电容和PN二极管并联的SRD模型。
New Development of Soft Recovery Diode: Diode with Double Base Regions by the Diffusion 软恢复二极管新进展&扩散型双基区二极管
A voltage-switch model for step recovery diode ( SRD) and its SPICE simulation parameters are presented. The SRD-model-based design of the pulse generator for Ultra-WideBand ( UWB) fuze is explicitly discussed and its performance is predicted by PSPICE simulation. 给出了阶跃恢复二极管(SRD)的电压跃变模型以及SPICE仿真参数,分析讨论了基于SRD仿真模型的超宽带引信脉冲源的设计,并利用PSPICE仿真软件对设计的电路进行了仿真。
Design and emulate of fast and soft-recovery diode 快速软恢复二极管的仿真设计
In this paper, the probability for adjusting silicon fast recovery diode soft factors and softness by selecting proper recombination center in process is analyzed. 探讨了快恢复二极管制造过程中,选择适当的复合中心能级去调整快恢复二极管软度因子和软度的可行性。
The switching losses model of neutral-point-clamped three-level inverter with widely used IGBT and fast recovery diode is developed. 作为方法的应用,研究了三电平中点箝位式变换器开关损耗,研究的器件为主流功率器件IGBT和快恢复二极管。
Through the theoretical research, pulse generation could be performed by direct synthesis, using step recovery diode and transmission line, however, the implement of the circuit is not easy for integration, low-cost, low-complexity purposes. 通过理论研究,用阶跃恢复二极管和传输线可以直接合成IR-UWB信号,然而,这样的电路实现起来不易集成、功耗大、电路复杂。
Finally, a series of important reliability analysis of the semiconductor lighting control key devices including LED, MOSFET, fast recovery diode devices is made from the material structure, working dynamic performance. 最后对半导体照明控制关键器件作了一系列可靠性分析,包括LED、MOSFET、快恢复二极管等器件,如材料结构、工作动态性能等方面一一加以分析。
In fast recovery diode production, the method to reduce minority carrier lifetime and to shorten switching speed is to introduce recombination centre into the device. 在快恢复二极管的制造中,减小器件少子寿命,提高器件开关速度的方法是在器件内部引入复合中心。
This paper mainly discusses the formation and development of high frequency resistance welding machines, especially mentions the demand for large current fast recovery diode. 阐述了高中频电阻焊机的形式、发展,特别是对超大电流FRD快恢复整流二极管的需求。